Vortraege
Auswahl eingeladener Vortraege
- M. Knetzger, E. Meissner, Chr. Schröter, J. Friedrich
Theoretical Aspects and Microstructural Investigations on V-pit defects in HVPE grown GaN,
Journal of Crystal Growth, https://www.sciencedirect.com/science/article/pii/S0022024819302179?via%3Dihub, 2019, - E. Meissner
GaN- a long way to go from crystal growth to substrates for reliable electronic devices: The effects of structural disturbances on the electrical behavior of GaN from a materials perspective ,
Seminar, School of Electrcal Engineering, University of Padua, Padua, Italy, 2015, - E. Meissner
On the evolution of the dislocation microstructure of GaN crystals during the HVPE growth and direct observation of the crystal bow during the growth process,
9th International Workshop on Bulk Nitride Semiconductors, IWBNS-9, Korea, 2015, - E. Meissner
Thorough study of the evolution of the microstructure of thick GaN crystals as substrate material for homoepitaxial processing of GaN ,
Collaborative Conference on Crystal Growth 2014, Thailand, November 2014, - E. Meissner
Insight into the microstructure of a GaN crystal from the atomic to centimeter scale,
8th International Workshop on Bulk Nitride Semiconductors, Kloster Seeon, Germany , Sept. 30th to Oct. 5th 2013, - E. Meissner
Characterization of semiconductors, invited lecture,
15th International Summer School on Crystal Growth , University of Gdansk, School of Electrical Engineering, Gdansk, Poland, Aug. 1st - 5th 2013, - E. Meissner
Investigating the microstructure of bulk GaN crystals on multiple length scales - An example for multi-scale characterization of defect structure ,
Joint meeting 14. Annual IISB Conference in the frame of Tailored substrates for energy efficient wide-bandgap-devices and the 27. DGKK-Workshop Epitaxy of III/V-Semiconductors, Erlangen, Germany, December 2012, - E. Meissner
Development of means for in-situ insight into the ammonothermal growth process and experimental validation,
Seminar, Polish Academy of Science, Warschau, Nov. 2012, - E. Meissner
Development and experimental validation of a thermal model for the ammonothermal reactor and possibilities for in‐situ insight into the ammonothermal growth process,
Intensive discussion on Growth of Nitride Semiconductors, Tohoku University, Sendai, Japan, 22.-23. Oct. 2012, - E. Meissner
Analysis of key defects, in multi crystalline silicon for solar applications, influencing the performance of the solar cell,
1st. World Congress on Advanced Materials, WCAM, Beijing, China, 2012, - E. Meissner, N. S. A. Alt, E. Schluecker
Development of a novel in situ monitoring technology for ammonothermal reactors,
IWBNS - VII, Koyasan, Japan, 2011, - E. Meissner
Warum kann man GaN so schwer züchten? ,
Jahrestagung des Fraunhofer IISB, Erlangen, 2007 , - E. Meissner, S. Hussy, P. Berwian, I. Knoke, J. Friedrich, G. Müller
Reduction of the Dislocation Density in GaN during Low Pressure Solution Growth,
5th Int. Workshop on Bulk Nitride Semiconductors, Brazil, 2007, - E. Meissner
Liquid phase epitaxy of GaN on AlN substrates and considerations on surface preparation ,
IWBNS - VI, Galindia, Poland, 2009, - E. Meissner
GaN Substrate für die Homoepitaxie,
Festkörperphysik Seminar, University of Freiburg, 2006, - E. Meissner
Herstellung von GaN Substraten für die Homoepitaxie,
Seminar, Institut für Grenzflächen, Forschungszentrum Jülich, 2005 , - E. Meissner, B. Birkmann, S. Hussy, Sun, J. Friedrich, G. Müller
Characterization of GaN crystals and epitaxial layers grown from a solution at room pressure conditions,
3rd International Workshop on Bulk Nitride Semiconductors, Zakopane, September 4-9 2004 , - E. Meissner, B. Birkmann, S. Hussy, J. Friedrich, G. Müller
The challenge of growing GaN from a solution at ambient pressure,
German-Polish Workshop on Physics and Technology of Nitride Semiconductors, Berlin, March 1-3 2004, - E. Meissner, G. Sun, S. Hussy, B. Birkmann, J. Friedrich, G. Müller
Growth of GaN crystals and epilayers from solutions at ambient pressure,
21st Century COE Joint International Workshop on Bulk Nitrides, Tokyo, June 2-3 2003 , - E. Meissner
An experimental test of the reliability of extrapolation of diffusion data to low temperatures,
American Geophysical Union Fall Meeting 2001, San Francisco, 2001, - E. Meissner
ATEM zur Bestimmung von sub-µm Konzentrationsprofilen,
Seminar, Technical University of Darmstadt, 1998, - E. Meissner,
Study of the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere,
4th International Workshop on Bulk Nitride Semiconductors, Shiga, 2006,