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Papers

• S. Michler, S. Thapa, S. Besendörfer, M. Albrecht, R. Weingärtner, E. Meissner
  Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN-on-Si(111) PIN-Structures for Power Electronics,
  Physica Status Solidi, pss (b), doi.org/10.1002/pssb.202400019, 2400019 (2024)
  
  
• V. Garbe, S. Seidel, A. Schmid, U. Bläß, E. Meissner, J. Heitmann
  Ultra-low resistance Au-free V/Al/Ti/TiN ohmic contacts for AlGaN/GaN HEMTs,
  Appl. Phys. Lett. 13 November 2023, https://doi.org/10.1063/5.0171168, 123 (20), 203506 (2023)
  
  
• S. Besendörfer, E. Meissner, and J. Friedrich
  Statistical investigation of dislocation induced leakage current paths in AlGaN/ GaN HEMT structures on Si and the impact of growth conditions,
  Applied Physics Express, https://doi.org/10.35848/1882-0786/ac8639, 15, 095502 (2022)
  
  
• M. Zenk, G. Lukin, D. Bastin, R. Doradzinski, F. C. Beyer, E. Meissner and J. Friedrich
  Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors,
  Crystals, https://doi.org/10.3390/cryst12091248, 12, 1248 (2022)
  
  
• E. Meissner, R. Niewa
  Ammonothermal Synthesis and Crystal Growth of Nitrides,
  Springer Verlag, Materials Series, (2021)
  
  
• E. Meissner, S. Besendörfer, S. Faraji, E. Bahat-Treidel, J. Würfl
  The long journey from crystal growth to power devices, the role of materials development for III-Nitrides,
  VDE Verlag GmbH, Berlin, ISBN 978-3-8007-5515-8, PCIM Europe Digital Days, 2021, 317-322 (2021)
  
  
• D. Rafaja, P. Fischer, M. Barchuk, M. Motylenko, C. Roeder, S. Besendoerfer , E. Meissner
  X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks,
  Thin Solid Films, 732, 138777 (2021)
  
  
• Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, E. Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio
  High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications,
  Materials, MDPI , Open Access (2020)
  
  
• S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A., Vescan, J. Friedrich, and T. Erlbacher
  Interplay between C-doping, threading dislocations, breakdown and leakage in GaN on Si HEMT structures,
  AIP Advances , Vol. 10, Issue 4 (2020)
  
  
• S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Freitas, Jr., J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, and T. Erlbacher
  Vertical breakdown of GaN on Si due to V-pits,
  Journal of Applied Physics Featured Article, 127, 015701 (2020)
  
  
• T. Wicht, S. Mueller, R. Weingaertner, B. Epelbaum, S. Besendoerfer, M. Weisser, T. Unruh, E. Meissner
  X-ray characterization of PVT-grown bulk AlN single crystals,
  Journal of Applied Crystallography, 53, 1080-1086 (2020)
  
  
• G. Lukin, E. Meissner, J. Friedrich, F. Habel, G. Leibiger
  Stress evolution in thick GaN layers grown by HVPE,
  Journal of Crystal Growth, 550, doi.org/10.1016/j.jcrysgro.2020.125887 (2020)
  
  
• S. Besendörfer, E. Meissner, F. Medjdoub, J. Derluyn, J. Friedrich, T. Erlbacher
  The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors,
  Nature Scientific Reports, 10:17252, doi.org/10.1038/s41598-020-73977-2 (2020)
  
  
• I. Abid, R. Kabouche, F. Medjdoub, S. Besendörfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake
  Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure,
  IEEE Xplore, Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Doi 10.1109/ISPSD46842.2020.9170170. (2020)
  
  
• M. Knetzger, E. Meissner, Chr. Schröter, J. Friedrich
  Theoretical Aspects and Microstructural Investigations on V-pit defects in HVPE grown GaN,
  Journal of Crystal Growth , Volume 518, 51-58 (2019)
  
  
• S. Besendörfer , E. Meissner , A. Lesnik , J. Friedrich , A. Dadgar , T. Erlbacher
  Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices,
  Journal of Applied Physics , 125, 095704 (2019)
  
  
• A. Tajalli, Borga Matteo, M. Meneghini, C. De Santi, D. Benazzi, S. Besendörfer, R. Püsche, J. Derluyn, S. Degroote, M. Germain, R. Kabouche, I. Abid, E. Meissner, E. Zanoni, F. Medjdoub, G. Meneg
  Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment,
  Micromachines, MDPI Open Access Journal, (2019)
  
  
• J. Derluyn, M. Germain, E. Meissner
  Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics,
  in: Gallium Nitride enabled High Frequency and High Efficiency Power Conversion, Eds. Prof. Enrico Zanoni, Matteo Meneghini and Gaudenzio Meneghesso, Springer , 1-28 (2018)
  
  
• Lingyan Shen, S. Müller, Xinhong Cheng, Dongliang Zhang, Li Zheng, Dawei Xu, Yuehui Yu, E. Meissner, T. Erlbacher
  The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM,
  Superlattices and Microstructures, Volume 114, February 2018, Pages 200-206, 10.1016/j.spmi.2017.12.033 (2018)
  
  
• G. Meneghesso, J. Derluyn, E. Meissner, F. Medjdoub, A. Banerjee, J. Naundorf, M. Rittner
  Pushing the Limits of GaN-based Power Devices and Power Electronics,
  Bodos Power Systems, Wide Band Gaps, Aug. 2018, 52-55 (2018)
  
  
• E. Meissner, M. Haeckel, J. Friedrich
  A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques,
  MDPI Materials, 10, 1202, DOI 10.3390 (2017)
  
  
• Toni Lehmann, Christian Reimann, E. Meissner, Jochen Friedrich
  Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation,
  Acta Materalia, 106 , 98-105 (2016)
  
  
• J. Hertrampf, N.S.A. Alt, E. Schlücker, M. Knetzger, E. Meissner, R. Niewa
  Ammonothermal synthesis of GaN using Ba(NH2)2 as mineralizer,
  Journal of Crystal Growth, Vol. 456, 2-4 (2016)
  
  
• M.Knetzger, E. Meissner, J. Derluyn, M. Germain, J. Friedrich
  Correlation of Carbon Doping Variations with the Vertical Breakdown of GaN-on-Si for Power Electronics,
  Microelectronics Reliability, 66, 16-21 (2016)
  
  
• M. Widenmeyer, L. Shlyk, N. Becker, R. Dronskowski, E. Meissner, R. Niewa
  Synthesis of Metastable Co4N, Co3N, Co2N, and CoO0.74N0.24 from a Single Azide Precursor and Intermediates in CoBr2 Ammonolysis,
  European Journal of Inorganic Chemistry, 10.1002/ejic.201600684, 4792-4801 (2016)
  
  
• Chr. Reimann, J. Friedrich, E. Meissner, M. Hollatz, L. Sylla
  Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon,
  Acta Materialia, Volume 93, 129-137 (2015)
  
  
• M. Fuegl, G. Mackh, E. Meissner, L. Frey
  Assessment of Dicing Induced Damage and Residual Stress on the Mechanical and Electrical Behavior of Chips,
  Electronic Components and Technology Conference (ECTC), IEEE DoI 10.1109/ECTC.2015.7159594, 214-219 (2015)
  
  
• Yoshihiro Kangawa, Hiroshige Suetsugu, Michael Knetzger, Elke Meissner, Kouji Hazu, Shigefusa Chichibu, Takashi Kajiwara, Satoru Tanaka, Yosuke Iwasaki, and Koichi Kakimoto
  Structural and optical properties of AlN grown by solid source solution growth method,
  Japanese Journal of Applied Physics, 54, 085501 (2015)
  
  
• Michael Knetzger, E. Meissner, Joff Derluyn, Marianne Germain, Jochen Friedrich
  Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices ,
  Solid State Phenomena, 242, 417-420 (2015)
  
  
• J. Seebeck, P. Saava, J. Erlekampf, E. Meissner, J. Friedrich, L. Frey
  Species transport by natural convection of supercritical ammonia,
  Turbulent Heat and Mass Transfer, THMT-8 2015, Sarajevo, Begell House USA, , 423-426 (2015)
  
  
• J. Seebeck, P. Savva, J. Erlekampf, E. Meissner, J. Friedrich, L. Frey
  Species transport by natural convection of supercritical ammonia,
  Turbulence, Heat and Mass Transfer , 8, (2015 )
  
  
• T. Lehmann, E. Meissner, M. Zschorsch, M. Trempa, C. Reimann, J. Friedrich
  Laue-Scanner: A New Method for Determination of Grain Orientations and Types of Grain Boundaries of Multicrystalline Silicon on a Full Wafer Scale,
  Acta Materialia, 69C , 1-8 (2014 )
  
  
• M. Widenmeyer, T. C. Hansen, E. Meissner, R. Niewa
  Formation and Decomposition of Iron Nitrides Observed by in situ Powder Neutron Diffraction and Thermal Analysis,
  Zeitschrift fuer Allgemeine und Anorganische Chemie, Vol 640, Issue 7, 1265-1274, (2014)
  
  
• J. Erlekampf, J. Seebeck, P. Savva, E. Meissner, J. Friedrich, N. S. Alt, E. Schlücker, L. Frey
  Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes,
  Journal of Crystal Growth, 403, 96-104 (2014)
  
  
• M. Fuegl, G. Mackh, E. Meissner, L. Frey
  Analytical stress characterization after different chip separation methods,
  Microelectronics Reliability, Volume 54, Issues 9-10 , Pages 1735-1740 (2014)
  
  
• Marc Widenmeyer, E. Meissner, Anatoliy Senyshyn and Rainer Niewa
  On the Formation Mechanism of Chromium Nitrides: An in situ Study,
  Zeitschrift für anorganische und allgemeine Chemie , DOI: 10.1002/zaac.201400246, IN PRESS (2014)
  
  
• Sakari Sintonen, Mariusz Rudziński, Sami Suihkonen, Henri Jussila, Michael Knetzger, E. Meissner, Andreas Danilewsky, Turkka O. Tuomi and Harri Lipsanen
  Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN,
  Journal of Applied Physics, 116, 083504 (2014)
  
  
• Eva-Regine Carl, Andreas Danilewsky, E. Meissner, Tobias Geiger
  Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth,
  Journal of Applied Crystallography, Vol. 47, doi:10.1107/S1600576714023061 (2014)
  
  
• N. S. Alt, E. Meissner, E. Schluecker
  Development of a novel in situ monitoring technology for ammonothermal reactors,
  Journal of Crystal Growth, Vol 350, 2-4 (2012)
  
  
• M. Rumler, M. Rommel, J. Erlekampf, M. Azizi, T. Geiger, A. J. Bauer, E. Meissner, L. Frey
  Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive AFM,
  Journal of Applied Physics, 112, 034909-033909-10 (2012)
  
  
• N. S. A. Alt, E. Meissner, E. Schluecker
  In situ monitoring technologies for ammonothermal reactors,
  Phys. Status Solidi C 9, No. 3-4,/ DOI 10.1002/pssc.201100361, 436-439 (2012)
  
  
• E. Meissner, S. Schweigard, J. Friedrich T. Paskova, K. Udwary, G. Leibiger, F. Habel
  Evaluation of dark spot counting for the determination of dislocation density in differently doped HVPE GaN ,
  Journal of Crystal Growth, Volume 340, Issue 1, Pages 78-82 (2012)
  
  
• M. Azizi , E. Meissner, J. Friedrich
  Considerations on the effect of interstitial and precipitated Fe in unintentionally Fe-doped mc silicon,
  Materials Science Forum , Vol. 725 , Defects-Recognition, Imaging and Physics in Semiconductors XIV (2012)
  
  
• T. Erlbacher, M. Bickermann, B. Kallinger, E. Meissner, A. Bauer, and L. Frey
  Ohmic and rectifying contacts on bulk AlN for radiation detector applications,,
  Phys. Status Solidi C / DOI 10.1002/pssc.201100341, No 3-4, 968-971 (2012)
  
  
• M. Azizi, E. Meissner, J. Friedrich, G. Müller
  Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates ,
  Journal of Crystal Growth, 322, 74-77 (2011)
  
  
• D. Ehrentraut, E. Meissner
  A Review on the Na-Flux Method toward Growth of Large-Size GaN Crystal,
  published in: Technology of GaN Crystal growth , Editors: D. Ehrentraut, E. Meissner, M. Bockowski, Springer Verlag Heidelberg, (2010)
  
  
• E. Meissner, S. Hussy, J. Friedrich
  Low pressure solution growth (LPSG) of gallium nitride,
  published in: Technology of GaN Crystal growth , Editors: D. Ehrentraut, E. Meissner, M. Bockowski, Springer Verlag Heidelberg, (2010)
  
  
• I.Y. Knoke, P. Berwian, E. Meissner, J. Friedrich, H.P. Strunk, G. Mueller
  Selective etching of dislocations in GaN grown by low-pressure solution growth,
  Journal of Crystal Growth, 312, 20, 3040-3045 (2010)
  
  
• J. Friedrich, B. Kallinger, P. Berwian, E. Meissner
  Interaction of dislocations during epitaxial growth of SiC and GaN,
  Crystal Growth and Technology, Semiconductors and Devices, Wiley-VCH, 137-150 (2010)
  
  
• M. Azizi, E. Meissner, J. Friedrich
  Ultrasound measurement of the position of the growing interface during directional solidificaiton of silicon,
  Proceedings of 25th European Photovoltaic Solar Energy Conference, Valencia, 1520-1523 (2010)
  
  
• M. Kozlowska,y R. Oechsner, M. Pfeffer, A. J. Bauer, E. Meissner, L. Pfitzner, H. Ryssel,W. Maass, J. Langer et al.
  Properties of TaN Thin Films Produced Using PVD Linear Dynamic Deposition Technique,
  e-J. Surf. Sci. Nanotech., Vol. 7, 277-283 (2009)
  
  
• S. Hussy, E. Meissner, J. Friedrich
  Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 in,
  Journal of Crystal Growth, 310, 738-747 (2008)
  
  
• B.Kallinger, E. Meissner, P. Berwian, S. Hussy, J. Friedrich, G. Mueller
  Vapour phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material,
  Crystal Research and Technology, 43, [1], 14-21 (2008)
  
  
• T. Wunderer, J. Hertkorn, F. Lipski, P. Brückner, M. Feneberg, M. Schirra, K. Thonke, I. Knoke, E. Meissner, A. Chuvilin, U. Kaiser, and F. Scholz
  Optimization of semipolar GaInN/GaN blue/green light emitting diodes on {1-101} GaN side facets,
  Gallium Nitride Materials and Devices III, edited by Hadis Morkoc, Cole W. Litton, Jen-Inn Chyi, Yasushi Nanishi,, edited by Hadis Morkoc, Proc. of SPIE Vol. 6894, 68940V , doi: 10.1117/12.763400 (2008)
  
  
• S. Hussy, P. Berwian, E. Meissner, J. Friedrich, G. Müller
  On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN ,
  Journal of Crystal Growth, 311, 62-65 (2008)
  
  
• I.Y. Knoke, E. Meissner, J. Friedrich, H.P. Strunk, G. Müller
  Reduction of the dislocation density in GaN during low-pressure solution growth ,
  Journal of Crystal Growth, Volume 310, Issue 14, 3351-3357 (2008)
  
  
• G. Sun, E. Meissner, P. Berwian and G. Müller
  Application of a thermogravimetric technique for the determination of low nitrogen solubilities in metals: Using iron as an example ,
  Thermochimica Acta, Volume 474, Issues 1-2, 36-40 (2008)
  
  
• Jochen Friedrich, Birgit Kallinger, Isabel Knoke, Patrick Berwian, E. Meissner
  Crystal Growth Of Compound Semiconductors with reduced dislocation densities,
  20th intl. conference on InP and related materials , Proc. IPRM 2008, (2008)
  
  
• G. Sun, E. Meissner, P. Berwian, S. Hussy, G. Müller
  Study of the kinetics of the formation reaction of GaN from solutions under ammonia atmosphere,
  Journal of Crystal growth, Volume 305, Issue 2, 326-334 (2007)
  
  
• B. Kallinger, E. Meissner, D. Seng, G. Sun, S. Hussy, J. Friedrich, G. Müller
  Study on the sublimation growth of GaN using different powder sources and investigation on the sublimation behaviour of GaN powder by means of thermogravimetry,
  Phys. Stat. Sol. (c), Vol. 4 No.7, 2264-2267 (2007)
  
  
• B. Birkmann, C. Salcianu, E. Meissner, S. Hussy, J. Friedrich, G. Müller
  Characterisation of the electrical properties of solution-grown GaN crystals by reflectivity and Hall measurements,
  phys. stat. sol. (c), 3 No.3 , 575-578 (2006)
  
  
• S. Hussy, E. Meissner, B. Birkmann, I. Brauer, J. Off, F. Scholz, H.P. Strunk, G. Müller
  Morphology and Microstructure of a-plane GaN layers grown by MOVPE and by low pressure solution growth (LPSG),
  phys. stat. sol. (a), 203, No. 7, 1676-1680 (2006)
  
  
• B. Birkmann, S. Hussy, G. Sun, P. Berwian, E. Meissner, J. Friedrich, G. Müller
  Considerations on facetting and on the atomic structure of the phase boundary in Low Pressure Solution Growth (LPSG) of GaN,
  Journal of Crystal Growth, Vol. 297, Issue 1, 133-137 (2006)
  
  
• G. Sun, E. Meissner, S. Hussy, B. Birkmann, J. Friedrich, G. Müller
  Morphology of GaN single crystals grown from Ga-solutions under flowing ammonia,
  Journal of Crystal Growth, Volume 292, Issue 2, 201-205,1 July (2006)
  
  
• E. Meissner, B. Birkmann, S. Hussy, G.Sun, J. Friedrich, G. Mueller
  Characterisation of GaN crystals and epilayers grown from a solution at room pressure.,
  Phys. Stat. sol. (c), Vol. 2 Issue 7, 2040-2043 (2005)
  
  
• J. Friedrich, E. Meissner, B. Birkmann, G. Sun, S. Hussy, G. Müller
  Grundlagen der Niederdruck-Lösungszüchtung von Galliumnitrid-Kristallen.,
  Zeitschrift für Kristallographie, Supplement No. 21, (2004)
  
  
• E. Meissner, G. Sun, S. Hussy, B. Birkmann, J. Friedrich, G. Müller
  Growth of GaN crystals and epilayers from solutions at ambient pressure. 21th Century COE Joint International Workshop on Bulk Nitrides,
  Published by Institute of Pure and Applied Physics, Tokyo, Japan (2003)
  
  
• R. Dohmen, H.-W. Becker, E. Meissner, T. Etzel und S. Chakraborty
  Production of silicate thin films using pulsed laser deposition (PLD) and applications to studies in mineral kinetics.,
  European Journal of Mineralogy, 14, 1155-1168 (2002)
  
  
• E. Meissner
  Messung von kurzen Konzentrationsprofilen mit Hilfe der analytischen Transmissionselektronenmikroskopie (TEM-EDX) am Beispiel der Bestimmung von Diffusionskoeffizienten für die Mg-Fe Interdiffusion in Olivin,
  Dissertation, Universität Bayreuth, (2000)
  
  
• E. Meissner, T. G. Sharp, S. Chakraborty
  Quantitative measurement of short compositional profiles using analytical transmission electron microscopy,
  American Mineralogist, Vol 83, (1998)
  
  
• E. Meissner, T. G. Sharp, S. Chakraborty
  Analytical TEM measurements of sub-µm diffusion profiles: obtaining low temperature diffusion data.,
  Zeitschrift für Kristallographie, Supplement, 11 (1996)
  
  
• E. Meissner, T. G. Sharp, S. Chakraborty
  Analytical TEM measurements (ATEM) of sub-µm diffusion profiles.,
  Terra Nova, Vol 8,Supplement, 1 (1996)
  
  
• Herrmann, M., Schubert, Chr., Hermel, W., E. Meissner, Ziegler, G.
  Sinterverhalten, Gefüge und Eigenschaften von TiCxN(1-x)/Si3N4-Verbundwerkstoffen,
  CFI Ceramic Forum International , 73 (7-8) , 434-445 (1996)
  
  
• E. Meissner, H.-J. Kleebe, G. Ziegler
  Quantitative image analysis of gas-pressure sintered Si3N4.,
  Silicon Nitride '93, Stuttgart, Trans Tech Publications (1994)
  
  
• H.-J. Kleebe, S. Unger, E. Meissner, G. Ziegler
  Microstructure and Toughness correlation in silicon nitride ceramics,
  8th CIMTEC, Florence, (1994)
  
  
• E. Meissner, S. Unger, H.J. Kleebe, G. Ziegler
  Quantitative analysis of Si3N4 microstructure response on interface chemistry,
  Key Engeneering Materials, Vol. 89-91, (1994)
  
  
• M. Herrmann, A. Beger, C. Schubert, W. Hermel, E. Meissner, G. Ziegler
  Microstructure, mechanical properties and wear of TiN Si3N4 composites,
  Materials by Powder Technology, , (1993)
  
  
• E. Meissner, H.-J. Kleebe, G. Ziegler
  Influence of post-annealing on the morphology of gas-pressure sintered Si3N4 with various sintering additives.,
  Euro Ceramics, Vol 3, (1993)
  
  
• H.-J. Kleebe, E. Meissner, G. Ziegler
  Influence on grain morphology and interface chemistry on fracture resistance of Si3N4.,
  Journal de Physique, IV, C7,Vol 3 (1993)
  
  
• M. Herrmann, A. Beger, C. Schubert, W. Hermel, E. Meissner, G. Ziegler
  Microstructure, mechanical properties and wear of Si3N4/TiN composites.,
  PTM '93, Materials by Powder Technology, (1993)
  
  
• E. Meissner, W. Luxem, G. Ziegler
  Einfluss stofflicher und verfahrenstechnischer Parameter auf die Hochtemperaturcharakteristika von gasdruckgesintertem Siliciumnitrid,
  Cfi, 8, [3] (1991)
  
  
• E. Meissner, H. Pöllmann, H-J. Kuzel
  Der Einbau von Na+ in Tricalciumaluminat (C3A) - Kristallographie und Hydratation -,
  Ber.d. Dt. Miner. Ges., Bh. Eur. J. Min. , Vol 2, 173, (1990)
  
  
• Koury, H.N. , Pöllmann, H., E. Meissner
  The low temperature mineral assemblage of Maquarin-, Daba- Region in Jordan,
  Fortschr. Min. 66 Bh, 77, (1988)
  
  
• TEST
  Test,
  test, 2020, 8 ( 07/2020)
  
  

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